Line Scale Standards (Series LS)  Chip Dimensionslength x width:
16.5 mm x 16.5 mmthickness:
0.525 mm or 1.2 mmView (scan direction: horizontal)
Main Scales of Types LS W 62500 and LS D 62500
| 6 scales of length, µm |
250 |
625 |
2500 |
6250 |
25000 |
62500 |
| each with 25 periods pitch, µm |
10 |
25 |
100 |
250 |
1000 |
2500 |
| Certified uncertainty (typical) of pitch, nm |
2.5 |
2.5 |
2.5 |
5 |
5 |
10 |
| Certified uncertainty (typical) of scale`s length, nm |
50 |
50 |
70 |
100 |
100 |
200 |
Optional Complementary Structures of Types LS W 62500T and LS D 62500T*
| 6 scales of length, µm |
800 |
600 |
500 |
400 |
300 |
200 |
| each with 50 periods of the pitch, µm |
16 |
12 |
10 |
8 |
6 |
4 |
Further Specifications of the Line Scale Standards
| LS W 62500 |
d, µm |
γ, deg |
Ra(Top), nm |
Pt(EG), nm |
| Length of the pitch p > 14 µm |
5 other * |
54.7 |
< 5 |
30 |
| Length of the pitch p < 14 µm |
p/(22) |
54.7 |
< 5 |
- |
| LS D 62500* |
5 |
ca. 90 |
5 |
|
Legend:
* - please inquire
d - etch depth
γ - angle of inclination of sidewalls
Ra(Top) - arithmetic average roughness of the polished surface (1000 µm scan length)
Ra(EG) - arithmetic average roughness of the etch ground (1000 µm scan length)
Pt(EG) - maximum peak to valley distance of the etch ground
Order Codes
| |
Wet Etch, Glass Substrate |
Wet Etch, Silicon Substrate |
Dry Etched, Silicon Substrate |
Dry Etched, Glass Substrate |
| Lateral |
LS WG 62500 |
LS WS 62500 |
LS DS 62500* |
LS DG 62500 |
| With Optionnal Complementary Structures |
LS WG 62500 T |
LS WS 62500 T |
LS DS 62500 T* |
LS DG 62500 T* |
|
